DIODESINC.DMTH6016LFVWQ-7-A.PowerMOSFET,NChannel,60V,41A,0.0123ohm,PowerDI3333,SurfaceMount ...,ApowerMOSFETisaspecifictypeofmetal–oxide–semiconductorfield-effecttransistor(MOSFET)designedtohandlesignificantpowerlevels.,MostpowerMOSFETsfeatureave...

功率MOSFET

功率MOSFET和IGBT都有隔離的閘體，因此在驅動上比較容易。功率MOSFET的缺點是增益較小，有時閘極驅動的電壓甚至比實際要控制的電壓還低。

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DIODESINC.DMTH6016LFVWQ-7-A.PowerMOSFET,NChannel,60V,41A,0.0123ohm,PowerDI3333,SurfaceMount ...,ApowerMOSFETisaspecifictypeofmetal–oxide–semiconductorfield-effecttransistor(MOSFET)designedtohandlesignificantpowerlevels.,MostpowerMOSFETsfeatureaverticalstructurewithSourceandDrainonoppositesidesofthewaferinordertosupporthighercurrentandvoltage.Figure1a ...,PowerMOSFETMOSFET在MouserElectronics有...